4,194,304 words x 4 bit cmos dynamic ram description the gm71v(s)16400c/cl is the new generation dynamic ram organized 4,194,304 words x 4 bit. gm71v(s)16400c/cl has realized higher density, higher performance and various functions by utilizing advanced cmos process technology. the gm71v(s)16400c/cl offers fast page mode as a high speed access mode. multiplexed address inputs permit the gm71v(s)16400c/cl to be packaged in a standard 300 mil 24(26) pin soj, and a standard 300 mil 24(26) pin plastic tsop ii. the package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment. system oriented features include single power supply 3.3v+/-0.3v tolerance, direct interfacing capability with high performance logic families such as schottky ttl. features * 4,194,304 words x 4 bit organization * fast page mode capability * single power supply (3.3v+/-0.3v) * fast access time & cycle time * low power active : 324/288/252mw (max) standby : 7.2mw (cmos level : max) : 0.36 mw (l-version : max) * ras only refresh, cas before ras refresh, hidden refresh capability * all inputs and outputs ttl compatible * 4096 refresh cycles/64ms * 4096 refresh cycles/128ms (l-version) * self refresh operation (l-version) * battery backup operation (l-version) * test function : 16bit parallel test mode 24(26) soj ( top view) pin configuration v cc i/o1 i/o2 we ras a11 a10 a0 a1 a2 a3 v cc v ss i/o4 i/o3 cas oe a9 a8 a7 a6 a5 a4 v ss 1 2 3 4 5 6 8 9 10 11 12 13 14 15 16 17 18 19 21 22 23 24 25 26 24(26) tsop ii v cc i/o1 i/o2 we ras a11 a10 a0 a1 a2 a3 v cc v ss i/o4 i/o3 cas oe a9 a8 a7 a6 a5 a4 v ss 1 2 3 4 5 6 8 9 10 11 12 13 14 15 16 17 18 19 21 22 23 24 25 26 gm71v(s)16400c/cl-5 gm71v(s)16400c/cl-6 gm71v(s)16400c/cl-7 t rac t cac t rc t pc 50 60 13 15 90 110 35 40 70 18 130 45 ( unit: ns) GM71V16400C gm71vs16400cl rev 0.1 / apr ? 01
GM71V16400C gm71vs16400cl rev 0.1 / apr ? 01 pin description pin function pin function a0-a11 a0-a11 i/o1-i/o4 v cc v ss address inputs refresh address inputs data input/data output row address strobe column address strobe read/write enable output enable power (+3.3v) ground ordering information type no. access time package gm71v(s)16400cj/clj-5 gm71v(s)16400cj/clj-6 gm71v(s)16400cj/clj-7 50 ns 60ns 70ns 300 mil 24(26) pin plastic soj gm71v(s)16400ct/clt-5 gm71v(s)16400ct/clt-6 gm71v(s)16400ct/clt-7 50 ns 60ns 70ns 300 mil 24(26) pin plastic tsop ii absolute maximum ratings symbol parameter rating unit t a t stg v in/out v cc i out 0 ~ 70 -55 ~ 125 -0.5 ~ vcc +0.5( <= 4.6v(max)) -0.5 ~ 4.6 50 ambient temperature under bias storage temperature voltage on any pin relative to v ss supply voltage relative to v ss short circuit output current v v ma p d 1.0 power dissipation w note: all voltage referred to vss . ras cas recommended dc operating conditions (t a = 0 ~ 70c) symbol parameter unit v cc v ih v il supply voltage input high voltage input low voltage v v v max 3.6 vcc +0.3 0.8 typ 3.3 - - min 3.0 2.0 -0.3 oe c c nc no connection we
GM71V16400C ? 01 dc electrical characteristics (v cc = 3.3v+/-0.3v, vss = 0v, t a = 0 ~ 70c) symbol parameter note v oh v ol output level output "h" level voltage (i out = -2 ma ) unit max v cc 0.4 min 2.4 0 output "l" level voltage (i out = 2 ma ) i cc1 operating current average power supply operating current (ras, cas cycling : t rc = t rc min) i cc2 standby current (ttl) power supply standby current , d high-z) i average power supply current ras only refresh mode t = min) i cc5 power supply standby current (ras, cas >= v cc - 0.2v, d out = high-z) - i cc6 cas-before-ras refresh current t = min) 100 - i l(i) 10 -10 i l(o) 10 input leakage current any input (0v <= v in <= 4.6v) (d is disabled, 0v <= <= 4. 6v) self-refresh mode current (ras, cas<=0.2v , = high-z, cmos interface) 200 note: 1. i i 2. address can be changed once or less while ras = v 3. address can be changed once or less while cas = v 4. l - version. fast page mode current fast page mode ( pc = t pc min) 2 - 90 - 50 ns 60 ns 70 ns 80 70 - - - 90 - 50 ns 60 ns 70 ns 80 70 - - 80 - 50 ns 60 ns 70 ns 70 60 - v v ma ua ua ua battery backup operating current(standby with cbr refresh) (cbr refresh, t rc = 31.3us , t ras <= 0.3 us, d out = high-z, cmos interface) - ua ua 4 ma ma ma 2 1, 3 ma 90 - ns 60 70 ns 70 - 5 1 standby current ras = v ih cas = v il d out = enable
GM71V16400C gm71vs16400cl rev 0.1 / apr ? 01 capacitance (v cc = 3.3v+/-0.3v, t a = 25c) ac characteristics (v cc = 3.3v+/-0.3v, vss =0v, t a = 0 ~ 70c, notes 1, 2, 3,19,20) read, write, read-modify-write and refresh cycles (common parameters) symbol parameter note c i1 c i2 c i/o input capacitance (address) input capacitance (clocks) output capacitance (data-in/out) 1 1 1, 2 unit pf pf pf max 5 7 7 min - - - input rise and fall times : 2ns input timing reference levels : 0.8v, 2.0v output timing reference levels : 0.8v, 2.0v output load : 1 ttl gate + c l (100pf) (including scope and jig) note: 1. capacitance measured with boonton meter or effective capacitance measuring method. 2. cas = v ih to disable d out . test conditions symbol parameter note max unit min max min max min t rc random read or write cycle time 90 - 110 - 130 - t rp ras precharge time 30 - 40 - 50 - t ras ras pulse width 50 10,000 60 10,000 70 10,000 t cas cas pulse width 10,000 10,000 10,000 15 18 t asr row address set up time 0 - - - 0 0 t rah row address hold time 8 - - - 10 10 t asc column address set-up time 0 - - - 0 0 t cah column address hold time - - - 10 15 t rcd ras to cas delay time 18 45 45 52 20 20 4 t rad ras to column address delay time 13 30 30 35 15 15 5 t rsh ras hold time 13 - - - 15 18 t csh cas hold time 50 - - - 60 70 t crp cas to ras precharge time 5 - - - 5 5 t t transition time (rise and fall) 3 50 50 50 3 3 8 t dzo oe delay time from d in 0 - - - 0 0 t dzc cas delay time from d in 0 - - - 0 0 gm71v(s)16400 c/cl-5 oe to d in delay time 13 - - - 15 18 6 7 7 t cp cas precharge time 8 - 10 - 10 - t odd gm71v(s)16400 c/cl-6 gm71v(s)16400 c/cl-7 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 13 8
GM71V16400C rev 0.1 / apr ? read cycle symbol unit max min min - 60 - 70 ns - 15 - 18 ns - 30 - 35 ns 0 - 0 - ns 0 - - ns 0 5 - - ns 5 30 - - ns 35 0 - - ns 0 30 - - ns 35 - 15 15 ns - - 15 - 18 ns 3 - - ns 3 3 - - ns 3 - 15 15 ns - 15 - - ns 18 access time from ras access time from address read command setup time read command hold time to cas read command hold time to ras column address to ras lead time access time from cas cas to output in low-z column address to cas lead time output buffer turn-off time access time from oe output data hold time output data hold time from oe output buffer turn-off time to oe cas to d in delay time gm71v(s)16400 c/cl-6 gm71v(s)16400 c/cl-7 write cycle max min - 50 - 13 - 25 0 - 0 - 5 - 25 - 0 - 25 - - 13 - 13 3 - 3 - - 13 13 - gm71v(s)16400 c/cl-5 symbol parameter max unit min max min 0 - 0 - 10 - 15 - 10 - 10 - 15 - 18 - 15 - - 18 0 - - 0 t rac t cac t aa t rcs t rch t rrh t ral t clz t cal t off t oac t oh t oho t oez t cdd t wcs t wch t wp t rwl t cwl t ds t dh 10 - - 15 write command setup time write command hold time write command pulse width write command to ras lead time write command to cas lead time data-in setup time data-in hold time note 13 13 9,10,21 10,11, 18,21 10,12, 18,21 14 10 14 6 note 16 16 15 gm71v(s)16400 c/cl-6 gm71v(s)16400 c/cl-7 ns min 0 - - 8 - - - 0 - - max gm71v(s)16400 c/cl-5 ns ns ns ns ns ns 8 13 13 8
gm71vs16400cl rev 0.1 / apr ? 01 read- modify-write cycle fast page mode cycle symbol parameter note max unit min max min 155 - 181 - 85 - 98 - 40 - 46 - 55 - 63 - 15 15 15 15 - 18 - read-modify-write cycle time ras to we delay time cas to we delay time column address to we delay time oe hold time from we gm71v(s)16400 c/cl-6 gm71v(s)16400 c/cl-7 ns ns ns ns ns min 131 - 73 - 36 - 48 - 13 - max gm71v(s)16400 c/cl-5 symbol parameter note max unit min max min 5 - 5 - ns 10 - 10 - ns 5 - 5 - ns gm71v(s)16400 c/cl-6 gm71v(s)16400 c/cl-7 0 - 0 - ns 10 - 10 - ns cas setup time (cas-before-ras refresh cycle) cas hold time (cas-before-ras refresh cycle) ras precharge to cas hold time we setup time (cas-before-ras refresh cycle) we hold time (cas-before-ras refresh cycle) min 5 - 8 - 5 - gm71v(s)16400 c/cl-5 0 - 10 - max symbol parameter note max unit min max min 40 - 45 - ns ns 35 - 40 - ns t rwc t rwd t cwd t awd t oeh t csr t chr t rpc t wrp t wrh t pc t rasp t acp t rhcp ns - - 100,000 100,000 - - 35 40 gm71v(s)16400 c/cl-6 gm71v(s)16400 c/cl-7 access time from cas precharge ras hold time from cas precharge fast page mode ras pulse width fast page mode cycle time min 35 - 30 - - - 30 gm71v(s)16400 c/cl-5 max 100,000 10,18,21 17
GM71V16400C gm71vs16400cl rev 0.1 / apr ? 01 test mode cycle fast page mode read-modify-write cycle symbol parameter note max unit min max min gm71v(s)16400 c/cl-6 gm71v(s)16400 c/cl-7 0 - 0 - ns 10 - 10 - ns test mode we setup time test mode we hold time self refresh mode ( l-version ) refresh symbol parameter unit max note min max min - 64 - refresh period refresh period (l - version) - 128 - gm71v(s)16400 c/cl-6 gm71v(s)16400 c/cl-7 ms ms 64 128 4096 cycles 4096 cycles * 20 symbol parameter note max unit min max min 85 - 96 - ns 60 - 68 - ns 15 fast page mode read-modify-write cycle time we delay time from cas precharge gm71v(s)16400 c/cl-6 gm71v(s)16400 c/cl-7 gm71v(s)16400 c/cl-5 max min 76 - 53 - min 0 - 10 - max gm71v(s)16400 c/cl-5 max min - 64 - 128 gm71v(s)16400 c/cl-5 symbol parameter note max unit min max min 100 - 100 - ras precharge time(self-refresh) 110 - 130 - ns t wts t wth t ref t ref t prwc t cpw t rass t rps t chs -50 - -50 - ns ras pulse width(self-refresh) cas hold time(self-refresh) gm71vs16400 cl-6 gm71vs16400 cl-7 us max min 100 - 90 - -50 - gm71vs16400 cl-5
GM71V16400C ? 01 notes: 1. ac measurements assume t t = 5ns. initialization cycles (any combination of cycles containing ras-only refresh or cas-before- ras refresh). if the internal refresh counter is used, a minimum of eight cas-before-ras only row address is indispensable on address a10 and a11. operation with the t rcd (max) limit insures that t rac (max) can be met, t rcd (max) is specified as a reference point only; if t rcd is greater than the specified t rcd (max) limit, then access time is controlled exclusively by t cac . operation with the t rad (max) limit insures that t rac (max) can be met, t rad (max) is specified as a reference point only; if t rad is greater than the specified t rad (max) limit, then access time is controlled exclusively by t aa . either t odd or t cdd must be satisfied. either t dzo or t dzc must be satisfied. v ih (min) and v il (max) are reference levels for measuring timing of input signals. also, transition times are measured between v ih (min) and v il (max). assume that t rcd <= t rcd (max) and t rad <= t rad (max). if t rcd or t rad is greater than the maximum recommended value shown in this table, t rac exceeds the value shown. measured with a load circuit equivalent to 1 ttl loads and 100pf . (v oh = 2.0v, v ol = 0.8v) assume that t rcd >= t rcd (max) and t rcd + t cac (max) >= t rad + t aa (max). assume that t rad >= t rad (max) and t rcd + t cac (max) <= t rad + t aa (max). either t rch or t rrh must be satisfied for a read cycles. t off (max) and t oez (max) define the time at which the outputs achieve the open circuit condition and are not referenced to output voltage levels. t wcs , t rwd , t cwd , t awd and t cpw are not restrictive operating parameters. they are included in the data sheet as electrical characteristics only; if t wcs >= t wcs (min), the cycles is an early write cycle and the data out pin will remain open circuit (high impedance) throughout the entire cycle; if t rwd >= t rwd (min), t cwd >= t cwd (min), and t awd >= t awd (min), or t cwd >= t cwd (min), t awd >= t awd (min) and t cpw >= t cpw (min), the cycle is a read-modify-write and the data output will contain data read from the selected cell; if neither of the above sets of conditions is satisfied, the condition of the data out (at access time) is indeterminate. these parameters are referenced to cas leading edge in early write cycles and to we leading edge in delayed write or read-modify-write cycles. t rasp defines ras pulse width in fast page mode cycles. access time is determined by the longest among t aa or t cac or t acp . 2. 3. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 4.
GM71V16400C gm71vs16400cl rev 0.1 / apr ? 01 in delayed write or read-modify-write cycles, oe must disable output buffer prior to applying data to the device. after ras is reset, if t oeh >= t cwl , the i/o pin will remain open circuit (high impedance); if t oeh < t cwl , invalid data will be out at each i/o. the 16m dram offers a 16-bit time saving parallel test mode. address ca 0 and ca 1 for the 4m x 4 are don't care during test mode. test mode is set by performing a we-and-cas-before- ras (wcbr) cycle. in 16-bit parallel test mode, data is written into 4 bits in parallel at each i/o (i/o1 to i/o4) and read out from each i/o. if 4 bits of each i/o are equal (all 1s or 0s), data output pin is a high state during test mode read cycle, then the device has passed. if they are not equal, data output pin is a low state, then the device has failed. refresh during test mode operation can be performed by normal read cycles or by wcbr refresh cycles. to get out of test mode and enter a normal operation mode, perform either a regular cas-before-ras refresh cycle or ras-only refresh cycle. in a test mode read cycle, the value of t rac , t aa , t cac and t acp is delayed by 2ns to 5ns for the specified value. these parameters should be specified in test mode cycles by adding the above value to the specified value in this data sheet. 19. 20. 21.
GM71V16400C gm71vs16400cl rev 0.1 / apr ? 01 package dimension unit: inches (mm) 24(26) pin tsop-ii 24(26) pin soj 0.669(17.00) max 0.661(16.80) min 0.295(7.49) min 0.329(8.38) min 0.340(8.64) max 0.147(3.75) max 0.128(3.25) min 0.020(0.50) max 0.015(0.38) min typ 0.050(1.27) 0.305(7.75) max 0.260(6.60) min 0.275(6.99) max 0.025(0.64) min 0.032(0.81) max 0.026(0.66) min 0.085(2.16) min 0.020(0.50) max 0.012(0.30) min typ 0.050(1.27) 0.007(0.18) max 0.003(0.08) min 0.047(1.20) max 0.041(1.05) max 0.037(0.95) min 0.296(7.52) min 0.303(7.72) max 0.678(17.24) max 0.670(17.04) min 0.355(9.02) min 0.371(9.42) max 0.024(0.60) max 0.016(0.40) min 0.008(0.21) max 0.004(0.12) min 0 ~ 5 deg
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